激情内射亚洲一区二区三区-www国产精品内射老熟女-小蜜被两老头吸奶头在线观看-国产亚洲精品久久久久5区-国产播放隔着超薄丝袜进入

CN EN
Home
About Us
Newpros
New 100V 3.2mΩ SGT MOSFET for PD power supply
New 100V 3.2mΩ SGT MOSFET for PD power supply Back
PDF

Introduction In recent years, the rapid popularity of various high-current charging protocols in the field of PD power supplies has made the FOM value of synchronous rectifier MOSFETs more stringent. Yangjie Technology launched advanced Copper Clip PDFN5060 package products YJG120G10AR/YJG120G10BR, reducing the packaging resistance of traditional PDFN5060 at the same time, reduce the package parasitic parameters, improve the heat dissipation capacity, to bring customers a better choice.
Features ? Using the SGT process, lower Rds (on) and Qg are obtained, resulting in lower FOM and reduced system losses in PD schemes
? Compared with traditional PDFN5060 package, Clip product has strong overcurrent capability, low thermal resistance, and a wider range of SOA to cope with various abnormal working conditions in PD power supply
SPECIFICATION

YJG120G10BR YJG120G10AR

Related new products

650V Super Junction N-Channel MOSFET

SOD-123FL package power ESD

N150V MOSFET for Industrial Control

DFN1608 Package Small Signal Schottky Diode for Mobile Phone PCB

Low Power SCR for Small Appliances

Optimization Design of Rectifier Bridge —— New Package GBU-L

1200V 80 mΩ SIC MOSFET

High current patch rectifier bridge

LFPAK56D MOSFET for Automotive

Micro-pattern trenches IGBT for Servo controller/frequency converter/industrial power supply